• 专利附录
  • 专利说明
  • 权利要求
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    • 专利摘要:
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and when forming a silicide layer applied to improve resistance characteristics of a device, a method of selectively growing a silicon epilayer in a region where a source / drain junction is to be formed after patterning a gate oxide film During the growth of the silicon epitaxial layer, the silicon epitaxial layer is also grown on the gate oxide layer by the lateral growth of the silicon epitaxial layer, and the grown epitaxial layer is used as the gate electrode, so that the metal-silicide layer formed through the silicide process is then formed. Formed on the surfaces of the source / drain junction of single crystal silicon and the gate electrode of single crystal silicon, the resistance characteristics of the metal-silicide layer can be improved, thereby improving the sheet resistance characteristics of the gate electrode and the leakage current characteristics of the source / drain junction. A method for manufacturing a semiconductor device is described.
    公开号:KR20030044145A
    申请号:KR1020010074735
    申请日:2001-11-28
    公开日:2003-06-09
    发明作者:김형식；사승훈
    申请人:주식회사 하이닉스반도체；
    IPC主号:
    专利说明:

    Method of manufacturing a semiconductor device
    [11] BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and in particular, a metal-silicide layer formed through a silicide process is formed on the surface of a source / drain junction made of single crystal silicon and a gate electrode made of single crystal silicon. The resistance characteristic is improved, and the present invention relates to a method for manufacturing a semiconductor device capable of improving the sheet resistance characteristic of the gate electrode and the leakage current characteristic of the source / drain junction.
    [12] In general, as semiconductor devices become more integrated, smaller, and faster, a conductive material having a lower resistance is required as a gate electrode of a transistor, and a low contact resistance at a source / drain junction is required. One method for lowering the resistance of the gate electrode and the contact resistance of the source / drain junction is to form a silicide layer on the surface of the gate electrode and the surface of the source / drain junction.
    [13] 1A to 1D are cross-sectional views of a device for explaining a method of manufacturing a conventional semiconductor device.
    [14] Referring to FIG. 1A, an isolation region 12 is formed on a silicon substrate 11 to define an active region. After performing a well ion implantation process for forming an NMOS device or a PMOS device, an oxide layer forming process, a polysilicon layer forming process, and a gate patterning process are performed to form a gate oxide layer 13 and a poly-oxide on the active silicon substrate 11. The silicon gate electrode 14 is formed.
    [15] Referring to FIG. 1B, the LDD ion implantation layer 15 and the halo ion implantation layer 16 are formed on the silicon substrate 11 on both sides of the polysilicon gate electrode 14 by performing an LDD ion implantation process and a halo ion implantation process. ).
    [16] Referring to FIG. 1C, a buffer oxide layer 17 and an insulation spacer layer 18 are formed on both sidewalls of the polysilicon gate electrode 14 by performing a gate poly oxide process, a spacer insulation layer forming process, and a spacer etching process. . Thereafter, a source / drain ion implantation process is performed to form a source / drain junction 19.
    [17] Referring to FIG. 1D, after depositing a metal layer for silicide on the entire structure in which the polysilicon gate electrode 14 and the source / drain junction 19 are formed, the polysilicon may be formed through a first heat treatment process, a selective etching process, and a second heat treatment process. A metal-silicide layer 100 is formed on each of the surface of the silicon gate electrode 14 and the surface of the source / drain junction 19.
    [18] Recently, the implementation of low power and high speed devices is important in 0.25 μm CMOS technology, and the sheet resistance of the gate with the metal-silicide layer increases as the gate line width decreases, and is exponential from the line width of 0.2 μm or less. Increases sharply. In a device having a line width of 0.2 μm or less, a cobalt-silicide layer is mainly applied by using cobalt (Co) as a metal for silicide, but in the case of a cobalt-silicide layer formed on a single crystal silicon substrate such as a source / drain junction, Stability is guaranteed even at temperatures above 850 ° C. However, in the case of cobalt-silicide layers formed on polysilicon such as gate electrodes, the resistance increases from the thermal process of 700 ° C or higher, especially when the line width is narrow. There is a problem and many restrictions are placed on the subsequent thermal process. The subsequent process is to insulate the metal wiring, and the oxide or nitride film formation process using the low pressure chemical vapor deposition (CVD) method and the deposition of the Boron-Phosphorous Doped Silica Glass (BPSG) film using the atmospheric pressure chemical vapor deposition method and subsequent Annealing is a low pressure chemical vapor deposition method that proceeds for about 2 hours at a temperature of 650 ℃ to 750 ℃ when depositing the oxide film or nitride film, and the annealing process after the deposition of the BPSG film is also performed at a temperature of about 800 ℃ Deterioration of the properties of the cobalt-silicide layer formed. The problem is that when the gate line width is the same or smaller than the grain size of the cobalt-silicide layer, agglomeration of the cobalt-silicide layer occurs and the sheet resistance of the gate is rapidly increased. If it is small, it is larger
    [19] Accordingly, the present invention forms the metal-silicide layer formed through the silicide process on the surface of the source / drain junction made of single crystal silicon and the gate electrode made of single crystal silicon, thereby improving the resistance characteristics of the metal-silicide layer, thereby providing a gate electrode. SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a semiconductor device capable of improving sheet resistance characteristics and leakage current characteristics of a source / drain junction.
    [20] According to an aspect of the present invention, there is provided a method of fabricating a semiconductor device, the method including: forming a gate oxide layer on a silicon substrate, and then patterning the gate oxide layer by a mask process and an etching process; Performing a selective silicon epi layer growth process to form a silicon epi layer on the entire structure including the patterned gate oxide layer; Etching a portion of the silicon epitaxial layer to form a silicon epitaxial gate electrode on the gate oxide layer; Forming an insulating spacer layer on both sidewalls of the gate electrode, and then forming a source / drain junction; And depositing a metal layer for silicide on the entire structure including the gate electrode and the junction, and then metal-silicide on the surface of the gate electrode and the surface of the junction through a first heat treatment process, a selective etching process, and a second heat treatment process. It characterized by comprising a step of forming a layer.
    [1] 1A to 1D are cross-sectional views of a device for explaining a method of manufacturing a conventional semiconductor device.
    [2] 2A to 2E are cross-sectional views of devices for describing a method of manufacturing a semiconductor device in accordance with an embodiment of the present invention.
    [3] <Explanation of symbols for the main parts of the drawings>
    [4] 11, 21: silicon substrate 12, 22: device isolation layer
    [5] 13, 23: gate oxide layer 14: polysilicon gate electrode
    [6] 240: silicon epitaxial layer 24: silicon epitaxial gate electrode
    [7] 15, 25: LDD ion implantation layer 16, 26: halo ion implantation layer
    [8] 17, 27: buffer oxide layer 18, 28: insulating spacer layer
    [9] 19, 29: source / drain junction 100, 200: metal-silicide layer
    [10] 300: photoresist pattern
    [21] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
    [22] 2A to 2E are cross-sectional views of devices for describing a method of manufacturing a semiconductor device in accordance with an embodiment of the present invention.
    [23] Referring to FIG. 2A, an isolation region 22 is formed on the silicon substrate 21 to define an active region. After the well ion implantation process for forming the NMOS device or the PMOS device is performed, the oxide layer formation process is performed to form the gate oxide layer 23 on the silicon substrate 21 in the active region. The photoresist pattern 300 is formed on the gate oxide layer 23.
    [24] In the above, the gate oxide layer 23 is formed to a thickness of 50 kPa to 150 kPa. The photoresist pattern 300 may be formed to cover the channel region, and may be covered to be 20 占 Å to 200 크게 larger than the actual channel region in consideration of etch damage during the subsequent etching process.
    [25] Referring to FIG. 2B, after the gate oxide layer 23 is patterned by an etching process using the photoresist pattern 300 as an etching mask, the photoresist pattern 300 is removed. When the selective silicon epitaxial growth process is performed, growth starts from the silicon substrate 21 on which the source / drain junction is to be formed, and lateral growth is also performed on the gate oxide layer 23, and the growth process is performed up to a predetermined thickness of the gate electrode. It proceeds to form the silicon epi layer 240.
    [26] In the above, the etching process of the gate oxide layer 23 may use either dry etching or wet etching, but wet etching is applied to minimize etching damage on the surface of the silicon substrate 21 on which the source / drain junction is to be formed. It is preferable. In wet etching, HF-based etch chemicals are used.
    [27] The selective silicon epilayer growth process proceeds as follows.
    [28] First, the natural oxide layer is removed using a HF-based chemical agent as a growth process pretreatment step, and then the silicon substrate 21 on which the silicon epitaxial layer is to be grown is hydrogenated through a hydrogen annealing process. The hydrogen annealing process is carried out for about 10 seconds to 5 minutes, flowing 1 liter to 2 liters of H 2 per minute in the temperature range of 800 ℃ to 1000 ℃. The process temperature is then set to 650 ° C to 900 ° C, the pressure is 10mtorr to 10torr, and under these conditions, SiH 4 Cl 2 gas is 40cc / min ~ 800cc / min with silicon source gas, and 10cc / By flowing at min ~ 200cc / min to grow a silicon epitaxial layer 240 to a thickness of 1000 ~ 3000Å.
    [29] On the other hand, SiH 4 Cl 2 gas, as well as may at least be one of a SiH 4 gas and Si 2 H 6 gas, it is possible to use a Cl 2 gas instead of HCl gas as additive gas to increase the selective growth rate of a silicon source gas .
    [30] Referring to FIG. 2C, a silicon epitaxial gate electrode 24 is formed on the gate oxide layer 23 by performing a gate mask process and a gate patterning process. The LDD ion implantation process and the halo ion implantation process are performed to form the LDD ion implantation layer 25 and the halo ion implantation layer 26 on the silicon substrate 21 on both sides of the silicon epitaxial gate electrode 24.
    [31] Referring to FIG. 2D, a buffer oxide layer 27 and an insulating spacer layer 28 are formed on both sidewalls of the silicon epitaxial gate electrode 24 by performing a gate poly oxide process, a spacer insulation layer forming process, and a spacer etching process. do. Thereafter, a source / drain ion implantation process is performed to form the source / drain junction 29.
    [32] Referring to FIG. 2E, after depositing a silicide metal layer on the entire structure on which the silicon epitaxial gate electrode 24 and the source / drain junction 29 are formed, a first heat treatment process, a selective etching process, and a second heat treatment process are performed. A metal-silicide layer 200 is formed on each of the surface of the silicon epitaxial gate electrode 24 and the surface of the source / drain junction 29.
    [33] In the above, the metal-silicide layer 200 is deposited cobalt (Co) to a thickness of 50 ~ 150Å, and then using a rapid heat treatment (RTP) equipment in a temperature range of 350 ℃ to 600 ℃ for 30 seconds to 90 seconds 1 After the first heat treatment process, to remove the unreacted material after the first heat treatment process, the selective etching process with SC-1 and SC-2 chemicals, and using the rapid heat treatment (RTP) equipment 700 ℃ ~ 850 ℃ It is formed by performing a second heat treatment process for 20 seconds to 40 seconds in the temperature range of. The SC-1 chemical is a mixed solution of NH 4 OH, H 2 O 2 and DI, and the SC-2 chemical is a mixed solution of HCl, H 2 O 2 and DI.
    [34] Meanwhile, after depositing the silicide metal layer, Ti or TiN may be deposited as a capping layer. Ti is deposited at a thickness of 80 kPa to 150 kPa and TiN is deposited at a thickness of 150 kPa to 300 kPa.
    [35] Since the gate electrode 24 is formed of epitaxial silicon, which is a single crystal silicon, the metal-silicide layer 200 formed by the above-described method of the present invention secures thermal stability of the metal-silicide layer 200 formed thereon. The resistance characteristics of the metal-silicide layer 200 are improved and the temperature selection for the subsequent thermal process is broadened. In addition, since the metal-silicide layer 200 formed on the source / drain junction 29 is also formed on the single crystal silicon in-silicon substrate, thermal stability is ensured to improve leakage current characteristics of the source / drain junction 29. .
    [36] As described above, the present invention forms the metal-silicide layer formed through the silicide process on the surface of the source / drain junction of monocrystalline silicon and the gate electrode of monocrystalline silicon, thereby improving the resistance characteristics of the metal-silicide layer. The sheet resistance of the gate electrode and the leakage current characteristics of the source / drain junction can be improved.
    权利要求:
    Claims (18)
    [1" claim-type="Currently amended] Forming a gate oxide layer on a silicon substrate and patterning the gate oxide layer by a mask process and an etching process;
    Performing a selective silicon epi layer growth process to form a silicon epi layer on the entire structure including the patterned gate oxide layer;
    Etching a portion of the silicon epitaxial layer to form a silicon epitaxial gate electrode on the gate oxide layer;
    Forming an insulating spacer layer on both sidewalls of the gate electrode, and then forming a source / drain junction;
    After depositing a silicide metal layer on the entire structure including the gate electrode and the junction, a metal-silicide layer is formed on the surface of the gate electrode and the surface of the junction through a first heat treatment process, a selective etching process, and a second heat treatment process. Method for manufacturing a semiconductor device comprising the step of forming a.
    [2" claim-type="Currently amended] The method of claim 1,
    The gate oxide layer is a semiconductor device manufacturing method, characterized in that formed in a thickness of 50 ~ 150Å.
    [3" claim-type="Currently amended] The method of claim 1,
    The etching process of the gate oxide layer is a method of manufacturing a semiconductor device, characterized in that to apply any one of dry etching and wet etching.
    [4" claim-type="Currently amended] The method of claim 1,
    The etching process of the gate oxide layer is a method of manufacturing a semiconductor device, characterized in that the wet etching using an etching chemical of HF series.
    [5" claim-type="Currently amended] The method of claim 1,
    When etching the gate oxide layer, the semiconductor device manufacturing method characterized in that for patterning 20 ~ 200 ~ greater than the size of the actual channel region.
    [6" claim-type="Currently amended] The method of claim 1,
    Before the selective silicon epitaxial growth process, removing the native oxide layer using a HF-based chemical, and further passivating the silicon substrate on which the silicon epitaxial layer is to be grown with hydrogen through a hydrogen annealing process. Method of manufacturing a semiconductor device.
    [7" claim-type="Currently amended] The method of claim 6,
    The hydrogen annealing process is a method of manufacturing a semiconductor device, characterized in that for about 10 seconds to 5 minutes flowing H 2 1 minute to 2 liters per minute in a temperature range of 800 ℃ to 1000 ℃.
    [8" claim-type="Currently amended] The method of claim 1,
    The selective silicon epitaxial growth process has a process temperature of 650 ° C to 900 ° C and a pressure of 10mtorr to 10torr, and under these conditions, SiH 4 Cl 2 gas is used as a silicon source gas from 40cc / min to 800cc / min. A method of manufacturing a semiconductor device, characterized by performing HCl gas at a flow rate of 10 cc / min to 200 cc / min.
    [9" claim-type="Currently amended] The method of claim 8,
    The silicon source gas is a method of manufacturing a semiconductor device, characterized in that at least one of SiH 4 gas and Si 2 H 6 gas as well as the SiH 4 Cl 2 gas.
    [10" claim-type="Currently amended] The method of claim 8,
    The additive gas is a method of manufacturing a semiconductor device, characterized in that for using the Cl 2 gas instead of the HCl gas.
    [11" claim-type="Currently amended] The method of claim 1,
    The silicon epitaxial layer is a semiconductor device manufacturing method, characterized in that formed in a thickness of 1000 ~ 3000Å.
    [12" claim-type="Currently amended] The method of claim 1,
    And forming an LDD ion implantation layer and a halo ion implantation layer on the silicon substrate on both sides of the gate electrode by performing an LDD ion implantation process and a halo ion implantation process before forming the insulating spacer layer. Method of preparation.
    [13" claim-type="Currently amended] The method of claim 1,
    The metal-silicide layer is a semiconductor device manufacturing method, characterized in that formed using a thickness of 50 kPa ~ 150 kPa.
    [14" claim-type="Currently amended] The method of claim 1,
    The first heat treatment process is a semiconductor device manufacturing method characterized in that performed for 30 seconds to 90 seconds in a temperature range of 350 ℃ to 600 ℃ using a rapid heat treatment equipment.
    [15" claim-type="Currently amended] The method of claim 1,
    The selective etching process is a semiconductor device manufacturing method characterized in that performed using the SC-1 and SC-2 chemical agent to remove the unreacted material after the first heat treatment process.
    [16" claim-type="Currently amended] The method of claim 1,
    The secondary heat treatment process is a semiconductor device manufacturing method characterized in that performed for 20 seconds to 40 seconds in the temperature range of 700 ℃ to 850 ℃ using a rapid heat treatment equipment.
    [17" claim-type="Currently amended] The method of claim 1,
    And depositing Ti or TiN as a capping layer after depositing the silicide metal layer.
    [18" claim-type="Currently amended] The method of claim 11,
    The Ti is deposited to a thickness of 80 kHz ~ 150 kHz, the TiN is deposited to a thickness of 150 kHz ~ 300 kHz method of manufacturing a semiconductor device.
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2001-11-28|Application filed by 주식회사 하이닉스반도체
    2001-11-28|Priority to KR1020010074735A
    2003-06-09|Publication of KR20030044145A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1020010074735A|KR20030044145A|2001-11-28|2001-11-28|Method of manufacturing a semiconductor device|
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